A 2.55-mW on-chip passive balun-LNA in 180-nm CMOS

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dc.authoridDundar, Gunhan/0000-0003-2044-2706|batur, okan zafer/0000-0002-1585-1794
dc.authorwosidDundar, Gunhan/Q-1648-2015
dc.authorwosidbatur, okan zafer/L-3251-2018
dc.contributor.authorAydogdu, Atakan
dc.contributor.authorTomar, Deniz
dc.contributor.authorBatur, Okan Zafer
dc.contributor.authorDundar, Gunhan
dc.date.accessioned2024-07-18T20:40:38Z
dc.date.available2024-07-18T20:40:38Z
dc.date.issued2022
dc.departmentİstanbul Bilgi Üniversitesien_US
dc.description.abstractIn this paper, an on-chip planar balun and a common-gate (CG) low-noise amplifier (LNA) employing a multiple feedback structure is presented. The planar interleaved balun is characterized through electromagnetic (EM) simulations using Advanced Design System (ADS) Momentum. A new lumped circuit model of the balun is created for use in transient simulations. CG-LNA employs g(m)-boosting and positive feedback structures to reduce the high noise figure (NF) of the traditional CG-LNA. The combined blocks achieve a minimum NF of 5.5 dB and an AC gain of 18.54 dB in post-layout simulations. The balun and LNA blocks are designed in a 180 nm CMOS technology using 1Poly6Metal (1P6M) layers. Simulation results are presented for post-layout and schematic cases. The total power consumption of the the circuit is 2.55 mW with 1.8 V nominal power supply. Furthermore, a time-domain UWB pulse simulation is done to confirm the operation of the blocks combined. These can be used to form the initial stages of an UWB receiver.en_US
dc.identifier.doi10.1007/s10470-022-01997-1
dc.identifier.endpage234en_US
dc.identifier.issn0925-1030
dc.identifier.issn1573-1979
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-85124770021en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage223en_US
dc.identifier.urihttps://doi.org/10.1007/s10470-022-01997-1
dc.identifier.urihttps://hdl.handle.net/11411/7154
dc.identifier.volume111en_US
dc.identifier.wosWOS:000754353500001en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofAnalog Integrated Circuits and Signal Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectLow Poweren_US
dc.subjectOn-Chip Passive Balunen_US
dc.subjectDifferentialen_US
dc.subject180 Nmen_US
dc.subjectUwben_US
dc.subjectLnaen_US
dc.subjectSpiral Inductorsen_US
dc.subjectCircuit Modelen_US
dc.subjectTransformersen_US
dc.subjectDesignen_US
dc.titleA 2.55-mW on-chip passive balun-LNA in 180-nm CMOSen_US
dc.typeArticleen_US

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